{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522639","patent":{"patent_number":"US-10522639","title":"Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET device","assignee":null,"inventors":[],"filing_date":"2019-06-29T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"At least one method, apparatus and system disclosed herein involves forming trench in a gate region, wherein the trench having an oxide layer to a height to reduce or prevent process residue. A plurality of fins are formed on a semiconductor substrate. Over a first portion of the fins, an epitaxial (EPI) feature at a top portion of each fin of the first portion. Over a second portion of the fins, a gate region is formed. In a portion of the gate region, a trench is formed. A first oxide layer at a bottom region of the trench is formed. Prior to performing an amorphous-silicon (a-Si) deposition, a flowable oxide material is deposited into the trench for forming a second oxide layer. The second oxide layer comprises the flowable oxide and the first oxide layer. The second oxide layer has a first height."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET device","description":"At least one method, apparatus and system disclosed herein involves forming trench in a gate region, wherein the trench having an oxide layer to a height to reduce or prevent process residue. A plural","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522639","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522639","citation_suggestion":"Patentable. \"Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET device\" (US-10522639). https://patentable.app/patents/US-10522639","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522639","json":"https://patentable.app/api/llm-context/US-10522639","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:23:02.970Z"}