{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522661","patent":{"patent_number":"US-10522661","title":"Integrated strained stacked nanosheet FET","assignee":null,"inventors":[],"filing_date":"2018-03-20T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":17,"abstract":"Methods of forming a semiconductor device include forming stress liners in contact with both ends of a fin of alternating channel material and sacrificial material layers. The stress liners exert a stress on the fin. The sacrificial material is etched away from the fin, such that the layers of the channel material are suspended between the stress liners. A gate stack on the suspended layers of channel material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated strained stacked nanosheet FET","description":"Methods of forming a semiconductor device include forming stress liners in contact with both ends of a fin of alternating channel material and sacrificial material layers. The stress liners exert a st","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522661","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522661","citation_suggestion":"Patentable. \"Integrated strained stacked nanosheet FET\" (US-10522661). https://patentable.app/patents/US-10522661","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522661","json":"https://patentable.app/api/llm-context/US-10522661","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:16:22.924Z"}