{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522667","patent":{"patent_number":"US-10522667","title":"Silicon carbide epitaxial wafer, silicon carbide insulated gate bipolar transistor, and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2018-04-26T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":11,"abstract":"The SiC-IGBT includes a p-type collector layer, an n−-type voltage-blocking-layer provided on the collector layer, p-type base regions provided on the n−-type voltage-blocking-layer, n+-type emitter regions provided in an upper portion of the p-type base region, a gate insulating film provided in an upper portion of the voltage-blocking-layer, and a gate electrode provided on the gate insulating film. The p-type buffer layer has thickness of five micrometers or more and 20 micrometers or less and is doped with Al at impurity concentration of 5×1017 cm−3 or more and 5×1018 cm−3 or less and doped with B at impurity concentration of 2×1016 cm−3 or more and less than 5×1017 cm−3."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide epitaxial wafer, silicon carbide insulated gate bipolar transistor, and method of manufacturing the same","description":"The SiC-IGBT includes a p-type collector layer, an n−-type voltage-blocking-layer provided on the collector layer, p-type base regions provided on the n−-type voltage-blocking-layer, n+-type emitter r","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522667","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522667","citation_suggestion":"Patentable. \"Silicon carbide epitaxial wafer, silicon carbide insulated gate bipolar transistor, and method of manufacturing the same\" (US-10522667). https://patentable.app/patents/US-10522667","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522667","json":"https://patentable.app/api/llm-context/US-10522667","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:47:05.093Z"}