{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522672","patent":{"patent_number":"US-10522672","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2018-08-07T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":13,"abstract":"A semiconductor substrate made of silicon carbide is provided with first and second cells having a MOS gate structure. The first cell is a normal MOSFET cell. In the second cell, a gate electrode is directly connected to a source electrode and has a potential fixed to a potential of the source electrode. A thickness of a gate insulating film of the second cell is set to be less than a thickness of a gate insulating film of a first cell so that the surface potential of a p-type channel region of the second cell becomes lower than the surface potential of a p-type channel region of the first cell during a negative bias to the gate electrode of the first cell."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"A semiconductor substrate made of silicon carbide is provided with first and second cells having a MOS gate structure. The first cell is a normal MOSFET cell. In the second cell, a gate electrode is d","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522672","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522672","citation_suggestion":"Patentable. \"Semiconductor device\" (US-10522672). https://patentable.app/patents/US-10522672","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522672","json":"https://patentable.app/api/llm-context/US-10522672","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:14:40.894Z"}