{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522676","patent":{"patent_number":"US-10522676","title":"Semiconductor device and method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2018-12-14T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":21,"abstract":"A MOS gate having a trench gate structure is formed on the front surface side of a silicon carbide substrate. A gate trench of the trench gate structure goes through an n+ source region and a p-type base region and reaches an n− drift region. Between adjacent gate trenches, a first p+ region that goes through the p-type base region in the depth direction and reaches the n− drift region is formed at a position separated from the gate trenches. The first p+ region is formed directly beneath a p++ contact region. The width of the first p+ region is less than the width w1 of the gate trench. A second p+ region is formed at the bottom of the gate trench. The first and second p+ regions are silicon carbide epitaxial layers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing semiconductor device","description":"A MOS gate having a trench gate structure is formed on the front surface side of a silicon carbide substrate. A gate trench of the trench gate structure goes through an n+ source region and a p-type b","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522676","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522676","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing semiconductor device\" (US-10522676). https://patentable.app/patents/US-10522676","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522676","json":"https://patentable.app/api/llm-context/US-10522676","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:07:53.988Z"}