{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522679","patent":{"patent_number":"US-10522679","title":"Selective shallow trench isolation (STI) fill for stress engineering in semiconductor structures","assignee":null,"inventors":[],"filing_date":"2017-10-30T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"The present disclosure relates to semiconductor structures and, more particularly, to selective shallow trench isolation (STI) fill material for stress engineering in semiconductor structures and methods of manufacture. The structure includes a single diffusion break (SDB) region having at least one shallow trench isolation (STI) region with a stress fill material within a recess of the at least one STI region. The stress fill material imparts a stress on a gate structure adjacent to the at least one STI region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Selective shallow trench isolation (STI) fill for stress engineering in semiconductor structures","description":"The present disclosure relates to semiconductor structures and, more particularly, to selective shallow trench isolation (STI) fill material for stress engineering in semiconductor structures and meth","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522679","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522679","citation_suggestion":"Patentable. \"Selective shallow trench isolation (STI) fill for stress engineering in semiconductor structures\" (US-10522679). https://patentable.app/patents/US-10522679","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522679","json":"https://patentable.app/api/llm-context/US-10522679","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T21:09:56.859Z"}