{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522740","patent":{"patent_number":"US-10522740","title":"Techniques for MRAM MTJ top electrode to metal layer interface including spacer","assignee":null,"inventors":[],"filing_date":"2018-05-29T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":17,"abstract":"Some embodiments relate to an integrated circuit including a magnetoresistive random-access memory (MRAM) cell. The integrated circuit includes a lower metal layer and an upper metal layer disposed over the lower metal layer. A bottom electrode is disposed over and in electrical contact with the lower metal layer. A magnetic tunneling junction (MTJ) is disposed over an upper surface of bottom electrode. A top electrode is disposed over an upper surface of the MTJ and is in contact with the upper metal layer. A sidewall spacer surrounds an outer periphery of the top electrode. An etch stop layer is disposed on top of an outer periphery of the spacer top surface and surrounding an outer periphery of the bottom surface of the upper metal layer. The etch stop layer overhangs the outer periphery of the spacer top surface."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Techniques for MRAM MTJ top electrode to metal layer interface including spacer","description":"Some embodiments relate to an integrated circuit including a magnetoresistive random-access memory (MRAM) cell. The integrated circuit includes a lower metal layer and an upper metal layer disposed ov","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522740","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522740","citation_suggestion":"Patentable. \"Techniques for MRAM MTJ top electrode to metal layer interface including spacer\" (US-10522740). https://patentable.app/patents/US-10522740","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522740","json":"https://patentable.app/api/llm-context/US-10522740","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:29:38.167Z"}