{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522742","patent":{"patent_number":"US-10522742","title":"Spin current magnetization reversal element, magnetoresistance effect element, and magnetic memory","assignee":null,"inventors":[],"filing_date":"2016-11-25T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["G11B","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"A spin current magnetization reversal element includes: a first ferromagnetic metal layer with a changeable magnetization direction; and a spin-orbit torque wiring, wherein a first direction is perpendicular to a surface of the layer, the wiring extends in a second direction intersecting the first and is bonded to the layer, wherein the wiring material is a binary alloy represented by the formula AxB1-x, a metal carbide, or metal nitride, wherein A is selected from Al, Ti, and Pt, and B is selected from Al, Cr, Mn, Fe, Co, Ni, Y, Ru, Rh, and Ir and the material has a cubic structure with symmetry of a space group Pm-3m or Fd-3m; or A is selected from Al, Si, Ti, Y, and Ta, and B is selected from C, N, Co, Pt, Au, and Bi and the material has a cubic structure with symmetry of a space group Fm-3m."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Spin current magnetization reversal element, magnetoresistance effect element, and magnetic memory","description":"A spin current magnetization reversal element includes: a first ferromagnetic metal layer with a changeable magnetization direction; and a spin-orbit torque wiring, wherein a first direction is perpen","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522742","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522742","citation_suggestion":"Patentable. \"Spin current magnetization reversal element, magnetoresistance effect element, and magnetic memory\" (US-10522742). https://patentable.app/patents/US-10522742","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522742","json":"https://patentable.app/api/llm-context/US-10522742","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:31:11.380Z"}