{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522747","patent":{"patent_number":"US-10522747","title":"Fully compensated synthetic ferromagnet for spintronics applications","assignee":null,"inventors":[],"filing_date":"2019-02-19T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":20,"abstract":"A laminated seed layer stack with a smooth top surface having a peak to peak roughness of 0.5 nm is formed by sequentially sputter depositing a first seed layer, a first amorphous layer, a second seed layer, and a second amorphous layer where each seed layer may be Mg and has a resputtering rate 2 to 30X that of the amorphous layers that are TaN, SiN, or a CoFeM alloy. A template layer that is NiCr or NiFeCr is formed on the second amorphous layer. As a result, perpendicular magnetic anisotropy in an overlying magnetic layer that is a reference layer, free layer, or dipole layer is substantially maintained during high temperature processing up to 400° C. and is advantageous for magnetic tunnel junctions in embedded MRAMs, spintronic devices, or in read head sensors. The laminated seed layer stack may include a bottommost Ta or TaN buffer layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fully compensated synthetic ferromagnet for spintronics applications","description":"A laminated seed layer stack with a smooth top surface having a peak to peak roughness of 0.5 nm is formed by sequentially sputter depositing a first seed layer, a first amorphous layer, a second seed","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522747","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522747","citation_suggestion":"Patentable. \"Fully compensated synthetic ferromagnet for spintronics applications\" (US-10522747). https://patentable.app/patents/US-10522747","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522747","json":"https://patentable.app/api/llm-context/US-10522747","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:51:04.236Z"}