{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522752","patent":{"patent_number":"US-10522752","title":"Magnetic layer for magnetic random access memory (MRAM) by moment enhancement","assignee":null,"inventors":[],"filing_date":"2018-08-22T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":22,"abstract":"A perpendicularly magnetized magnetic tunnel junction (p-MTJ) is disclosed wherein a boron containing free layer (FL) is subjected to a plasma treatment with inert gas, and a natural oxidation (NOX) process to form B2O3 before overlying layers are deposited. A metal layer such as Mg is deposited on the FL as a first step in forming a Hk enhancing layer that increases FL perpendicular magnetic anisotropy, or as a first step in forming a tunnel barrier layer on the FL. One or more anneal steps are essential in assisting B2O3 segregation from the free layer and thereby increasing the FL magnetic moment. A post-oxidation plasma treatment may also be used to partially remove B2O3 proximate to the FL top surface before the metal layer is deposited. Both plasma treatments use low power (<50. Watts) to remove a maximum of 2. Angstroms FL thickness."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetic layer for magnetic random access memory (MRAM) by moment enhancement","description":"A perpendicularly magnetized magnetic tunnel junction (p-MTJ) is disclosed wherein a boron containing free layer (FL) is subjected to a plasma treatment with inert gas, and a natural oxidation (NOX) p","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522752","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522752","citation_suggestion":"Patentable. \"Magnetic layer for magnetic random access memory (MRAM) by moment enhancement\" (US-10522752). https://patentable.app/patents/US-10522752","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522752","json":"https://patentable.app/api/llm-context/US-10522752","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T21:54:28.014Z"}