{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10526699","patent":{"patent_number":"US-10526699","title":"Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device","assignee":null,"inventors":[],"filing_date":"2018-07-20T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"A silicon carbide epitaxial film has a plurality of arc-shaped or annular basal plane dislocations and a plurality of threading dislocations. The plurality of threading dislocations have a first threading dislocation which is surrounded by the plurality of basal plane dislocations and a second threading dislocation which is not surrounded by the plurality of basal plane dislocations, when viewed from a direction perpendicular to a main surface. The plurality of basal plane dislocations and the first threading dislocation constitute an annular defect. An area density of the plurality of threading dislocations in the main surface is more than or equal to 50 cm−2. A value obtained by dividing an area density of the annular defect when viewed from the direction perpendicular to the main surface by the area density of the plurality of threading dislocations in the main surface is more than or equal to 0.00002 and less than or equal to 0.004."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device","description":"A silicon carbide epitaxial film has a plurality of arc-shaped or annular basal plane dislocations and a plurality of threading dislocations. The plurality of threading dislocations have a first threa","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10526699","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10526699","citation_suggestion":"Patentable. \"Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device\" (US-10526699). https://patentable.app/patents/US-10526699","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10526699","json":"https://patentable.app/api/llm-context/US-10526699","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:33:55.323Z"}