{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10526723","patent":{"patent_number":"US-10526723","title":"System and method for increasing III-nitride semiconductor growth rate and reducing damaging ion flux","assignee":null,"inventors":[],"filing_date":"2016-06-16T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":32,"abstract":"Systems and methods are disclosed for rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 μm/hour can be achieved."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"System and method for increasing III-nitride semiconductor growth rate and reducing damaging ion flux","description":"Systems and methods are disclosed for rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the p","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10526723","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10526723","citation_suggestion":"Patentable. \"System and method for increasing III-nitride semiconductor growth rate and reducing damaging ion flux\" (US-10526723). https://patentable.app/patents/US-10526723","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10526723","json":"https://patentable.app/api/llm-context/US-10526723","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T12:44:27.362Z"}