{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529414","patent":{"patent_number":"US-10529414","title":"SRAM cell having SiGe PMOS fin lines","assignee":null,"inventors":[],"filing_date":"2018-05-31T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":20,"abstract":"The present application provides a static random access memory (SRAM) cell. In one embodiment, the SRAM cell includes a first pass-gate field effect transistor (FET) and a first pull-up FET formed over at least one SiGe fin in a first N-type well (N-well) region; a second pass-gate FET and a second pull-up FET formed over at least one SiGe fin in a second N-well region; a first pull-down FET formed over one of a plurality of Si fins in a P-type well (P-well) region between the first and second N-well regions; and a second pull-down FET formed over another of the plurality of Si fins in the P-well region. Channel regions and source/drain regions of the first and second pass-gate FETs and the first and second pull-up FETs include SiGe alloys of different compositions or different impurity doping levels."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"SRAM cell having SiGe PMOS fin lines","description":"The present application provides a static random access memory (SRAM) cell. In one embodiment, the SRAM cell includes a first pass-gate field effect transistor (FET) and a first pull-up FET formed ove","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529414","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529414","citation_suggestion":"Patentable. \"SRAM cell having SiGe PMOS fin lines\" (US-10529414). https://patentable.app/patents/US-10529414","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529414","json":"https://patentable.app/api/llm-context/US-10529414","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T07:34:29.039Z"}