{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529561","patent":{"patent_number":"US-10529561","title":"Method of fabricating non-etch gas cooled epitaxial stack for group IIIA-N devices","assignee":null,"inventors":[],"filing_date":"2015-12-28T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A method of fabricating an epitaxial stack for Group IIIA-N transistors includes depositing at least one Group IIIA-N buffer layer on a substrate in a deposition chamber of a deposition system. At least one Group IIIA-N cap layer is then deposited on the first Group IIIA-N buffer layer. During a cool down from the deposition temperature for the cap layer deposition the gas mixture supplied to the deposition chamber includes NH3 and at least one other gas, wherein the gas mixture provide an ambient in the deposition chamber that is non-etching with respect to the cap layer so that at a surface of the cap layer there is (i) a root mean square (rms) roughness of <10 Å and (ii) a pit density for pits greater than (>) 2 nm deep less than (<) 10 pits per square μm with an average pit diameter less than (<) 0.05 μm."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of fabricating non-etch gas cooled epitaxial stack for group IIIA-N devices","description":"A method of fabricating an epitaxial stack for Group IIIA-N transistors includes depositing at least one Group IIIA-N buffer layer on a substrate in a deposition chamber of a deposition system. At lea","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529561","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529561","citation_suggestion":"Patentable. \"Method of fabricating non-etch gas cooled epitaxial stack for group IIIA-N devices\" (US-10529561). https://patentable.app/patents/US-10529561","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529561","json":"https://patentable.app/api/llm-context/US-10529561","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T16:56:31.813Z"}