{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529562","patent":{"patent_number":"US-10529562","title":"Fabrication of compound semiconductor structures","assignee":null,"inventors":[],"filing_date":"2019-03-31T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":2,"abstract":"A semiconductor substrate, comprising a first semiconductor material, is provided and an insulating layer is formed thereon; an opening is formed in the insulating layer. Thereby, a seed surface of the substrate is exposed. The opening has sidewalls and a bottom and the bottom corresponds to the seed surface of the substrate. A cavity structure is formed above the insulating layer, including the opening and a lateral growth channel extending laterally over the substrate. A matching array is grown on the seed surface of the substrate, including at least a first semiconductor matching structure comprising a second semiconductor material and a second semiconductor matching structure comprising a third semiconductor material. The compound semiconductor structure comprising a fourth semiconductor material is grown on a seed surface of the second matching structure. The first through fourth semiconductor materials are different from each other. Corresponding semiconductor structures are also included."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fabrication of compound semiconductor structures","description":"A semiconductor substrate, comprising a first semiconductor material, is provided and an insulating layer is formed thereon; an opening is formed in the insulating layer. Thereby, a seed surface of th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529562","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529562","citation_suggestion":"Patentable. \"Fabrication of compound semiconductor structures\" (US-10529562). https://patentable.app/patents/US-10529562","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529562","json":"https://patentable.app/api/llm-context/US-10529562","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:07:23.946Z"}