{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529567","patent":{"patent_number":"US-10529567","title":"Trench gate power MOSFET and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2018-07-24T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"Trench gate power MOSFET with an on-region. Cells in the on-region include a first epitaxial layer and a channel region. First trenches corresponding to polysilicon gates penetrate through the channel region, and each polysilicon gate is etched to form a groove in the top, the grooves filled with an interlayer film. A source region formed on side faces of the grooves in a self-aligned mode through angled ion implantation. Through the source region of a side structure, the surface of a portion, between the first trenches, of the channel region is directly exposed and formed with a well contact region. A front metal layer is formed on the surfaces of the cells in the on-region and leads out a source. The front metal layer of the source directly makes contact with well contact region and source region to form a connection structure without contact holes."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Trench gate power MOSFET and manufacturing method thereof","description":"Trench gate power MOSFET with an on-region. Cells in the on-region include a first epitaxial layer and a channel region. First trenches corresponding to polysilicon gates penetrate through the channel","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529567","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529567","citation_suggestion":"Patentable. \"Trench gate power MOSFET and manufacturing method thereof\" (US-10529567). https://patentable.app/patents/US-10529567","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529567","json":"https://patentable.app/api/llm-context/US-10529567","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T20:32:09.169Z"}