{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529574","patent":{"patent_number":"US-10529574","title":"Process of forming electron device having gate electrode","assignee":null,"inventors":[],"filing_date":"2018-09-20T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":11,"abstract":"A process of forming a gate electrode in an electrode device is disclosed. The process includes steps of, depositing an insulating film on a nitride semiconductor layer; forming a photoresist with an opening corresponding to the gate electrode on the insulating film; forming a recess in the insulating film using the photoresist as an etching mask, the recess leaving a rest portion in the insulating film; exposing the photoresist in oxygen plasma; baking the photoresist to make an edge of the opening thereof dull; etching the rest portion of the insulating film using the dulled photoresist as an etching mask; and forming the gate electrode so as to be in contact with the semiconductor layer through the opening in the insulating film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Process of forming electron device having gate electrode","description":"A process of forming a gate electrode in an electrode device is disclosed. The process includes steps of, depositing an insulating film on a nitride semiconductor layer; forming a photoresist with an ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529574","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529574","citation_suggestion":"Patentable. \"Process of forming electron device having gate electrode\" (US-10529574). https://patentable.app/patents/US-10529574","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529574","json":"https://patentable.app/api/llm-context/US-10529574","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T07:41:32.730Z"}