{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529578","patent":{"patent_number":"US-10529578","title":"Method of fabricating semiconductor structure","assignee":null,"inventors":[],"filing_date":"2018-10-30T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":22,"abstract":"A method of fabricating a semiconductor structure including the following steps is provided. A mask layer is formed on a semiconductor substrate. The semiconductor substrate revealed by the mask layer is anisotropically etched until a cavity is formed in the semiconductor substrate, wherein anisotropically etching the semiconductor substrate revealed by the mask layer comprises performing a plurality of first cycles and performing a plurality of second cycles after performing the first cycles, each cycle among the first and second cycles respectively includes performing a passivating step and performing an etching step after performing the passivating step. During the first cycles, a first duration ratio of the etching step to the passivating step is variable and ramps up step by step. During the second cycles, a second duration ratio of the etching step to the passivating step is constant, and the first duration ratio is less than the second duration ratio."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of fabricating semiconductor structure","description":"A method of fabricating a semiconductor structure including the following steps is provided. A mask layer is formed on a semiconductor substrate. The semiconductor substrate revealed by the mask layer","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529578","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529578","citation_suggestion":"Patentable. \"Method of fabricating semiconductor structure\" (US-10529578). https://patentable.app/patents/US-10529578","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529578","json":"https://patentable.app/api/llm-context/US-10529578","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:12:43.391Z"}