{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529581","patent":{"patent_number":"US-10529581","title":"SiN selective etch to SiO2 with non-plasma dry process for 3D NAND device applications","assignee":null,"inventors":[],"filing_date":"2017-12-29T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"Methods for isotropic etching at least a portion of a silicon-containing layer on a sidewall of high-aspect-ratio (HAR) apertures formed on a substrate in a reaction chamber are disclosed. The HAR aperture formed by plasma etching a stack of alternating layers of a first silicon-containing layer and a second silicon-containing layer, the second silicon-containing layer is different from the first silicon-containing layer. The method comprising the steps of: a) introducing a fluorine containing etching gas selected from the group consisting of nitrosyl fluoride (FNO), trifluoroamine oxide (F3NO), nitryl fluoride (FNO2) and combinations thereof into the reaction chamber; and b) removing at least a portion of the second silicon-containing layers by selectively etching the second silicon-containing layers versus the first silicon-containing layers with the fluorine containing etching gas to produce recesses between the first silicon-containing layers on the sidewall of the HAR aperture. Alternatively, the disclosed etching processes are cyclic etching processes."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"SiN selective etch to SiO2 with non-plasma dry process for 3D NAND device applications","description":"Methods for isotropic etching at least a portion of a silicon-containing layer on a sidewall of high-aspect-ratio (HAR) apertures formed on a substrate in a reaction chamber are disclosed. The HAR ape","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529581","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529581","citation_suggestion":"Patentable. \"SiN selective etch to SiO2 with non-plasma dry process for 3D NAND device applications\" (US-10529581). https://patentable.app/patents/US-10529581","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529581","json":"https://patentable.app/api/llm-context/US-10529581","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:34:56.031Z"}