{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529624","patent":{"patent_number":"US-10529624","title":"Simple contact over gate on active area","assignee":null,"inventors":[],"filing_date":"2017-11-21T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"Semiconductor devices and methods are provided to fabricate FET devices having overlapping gate and source/drain contacts while preventing electrical shorts between the overlapping gate and source/drain contacts. For example, a semiconductor device includes a plurality of semiconductor fins patterned in a starting semiconductor substrate; a set of gate structures formed on the starting semiconductor substrate; a set of spacers formed around each of the set of gate structures; a source and drain region grown around the plurality of fins; a conductive metal material on the source and drain region, an insulating material is configured to be deposited over an upper surface of the conductive metal material and the gate structure; and a plurality of contacts in the insulator material. The plurality of contacts is formed such that a bottom surface of the plurality of contacts is in contact with at least a portion of the upper surface of the gate structure. The plurality of contacts is further formed such that the plurality of contacts are positioned in at least a portion of the insulating material configured to be deposited over the upper surface of the conductive metal material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Simple contact over gate on active area","description":"Semiconductor devices and methods are provided to fabricate FET devices having overlapping gate and source/drain contacts while preventing electrical shorts between the overlapping gate and source/dra","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529624","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529624","citation_suggestion":"Patentable. \"Simple contact over gate on active area\" (US-10529624). https://patentable.app/patents/US-10529624","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529624","json":"https://patentable.app/api/llm-context/US-10529624","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T07:35:11.925Z"}