{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529660","patent":{"patent_number":"US-10529660","title":"Pore-filled dielectric materials for semiconductor structure fabrication and their methods of fabrication","assignee":null,"inventors":[],"filing_date":"2016-09-30T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":5,"abstract":"Pore-filled dielectric materials for semiconductor structure fabrication, and methods of fabricating pore-filled dielectric materials for semiconductor structure fabrication, are described. In an example, a method of fabricating a pore-filled dielectric material for semiconductor structure fabrication includes forming a trench in a material layer. The method also includes filling the trench with a porous dielectric material using a spin-on deposition process. The method also includes filling pores of the porous dielectric material with a metal-containing material using an atomic layer deposition (ALD) process."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Pore-filled dielectric materials for semiconductor structure fabrication and their methods of fabrication","description":"Pore-filled dielectric materials for semiconductor structure fabrication, and methods of fabricating pore-filled dielectric materials for semiconductor structure fabrication, are described. In an exam","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529660","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529660","citation_suggestion":"Patentable. \"Pore-filled dielectric materials for semiconductor structure fabrication and their methods of fabrication\" (US-10529660). https://patentable.app/patents/US-10529660","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529660","json":"https://patentable.app/api/llm-context/US-10529660","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:52:11.821Z"}