{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529710","patent":{"patent_number":"US-10529710","title":"Semiconductor device with local interconnect structure and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2016-12-21T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A method for manufacturing a semiconductor device having a local interconnect structure includes providing a semiconductor substrate having a gate on an active region, a hardmask layer on the gate, and a first dielectric layer on the gate, etching the first dielectric layer to form a first interconnect trench on the active region, forming a metal silicide layer at a bottom of the first interconnect trench, forming a first metal layer filling the first interconnect trench, forming a second dielectric layer on the gate and the first interconnect trench, etching the second dielectric layer to form a second interconnect trench in a staggered pattern relative to the first interconnect trench, etching the second dielectric layer to form a third interconnect trench, forming a second metal layer in the second interconnect trench and in the third interconnect trench to form the local interconnect structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with local interconnect structure and manufacturing method thereof","description":"A method for manufacturing a semiconductor device having a local interconnect structure includes providing a semiconductor substrate having a gate on an active region, a hardmask layer on the gate, an","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529710","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529710","citation_suggestion":"Patentable. \"Semiconductor device with local interconnect structure and manufacturing method thereof\" (US-10529710). https://patentable.app/patents/US-10529710","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529710","json":"https://patentable.app/api/llm-context/US-10529710","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:55:57.695Z"}