{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529713","patent":{"patent_number":"US-10529713","title":"Fin field effect transistor devices with modified spacer and gate dielectric thicknesses","assignee":null,"inventors":[],"filing_date":"2018-06-08T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":14,"abstract":"A method of forming fin field effect devices is provided. The method includes forming a plurality of vertical fins on a substrate. The method further includes forming a dielectric pillar on the substrate between two adjacent vertical fins, wherein at least one of the vertical fins is on a first region of the substrate, and at least one of the vertical fins is on a second region of the substrate. The method further includes growing a bottom source/drain layer on the first region of the substrate and the second region of the substrate. The method further includes depositing a bottom spacer layer on the bottom source/drain layer, and a filler layer on the bottom spacer layer. The method further includes forming a cover block on the first region of the substrate, and removing the portion of the filler layer on the second region of the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fin field effect transistor devices with modified spacer and gate dielectric thicknesses","description":"A method of forming fin field effect devices is provided. The method includes forming a plurality of vertical fins on a substrate. The method further includes forming a dielectric pillar on the substr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529713","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529713","citation_suggestion":"Patentable. \"Fin field effect transistor devices with modified spacer and gate dielectric thicknesses\" (US-10529713). https://patentable.app/patents/US-10529713","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529713","json":"https://patentable.app/api/llm-context/US-10529713","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:59:27.888Z"}