{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529716","patent":{"patent_number":"US-10529716","title":"Asymmetric threshold voltage VTFET with intrinsic dual channel epitaxy","assignee":null,"inventors":[],"filing_date":"2018-10-05T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"A method is presented for triggering asymmetric threshold voltage along a channel of a vertical transport field effect transistor (VTFET). The method includes constructing a first set fins from a first material, constructing a second set of fins from a second material, forming a source region between the first set of fins, and forming a drain region between the second set of fins, the source region composed of a different material than the drain region. The method further includes depositing a first high-k metal gate over the first set of fins and depositing a second high-k metal gate over the second set of fins, the second high-k metal gate being different than the first high-k metal gate such that the asymmetric threshold voltage is present along the channel of the VTFET in a region defined at the bottom of the first and second set of fins."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Asymmetric threshold voltage VTFET with intrinsic dual channel epitaxy","description":"A method is presented for triggering asymmetric threshold voltage along a channel of a vertical transport field effect transistor (VTFET). The method includes constructing a first set fins from a firs","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529716","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529716","citation_suggestion":"Patentable. \"Asymmetric threshold voltage VTFET with intrinsic dual channel epitaxy\" (US-10529716). https://patentable.app/patents/US-10529716","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529716","json":"https://patentable.app/api/llm-context/US-10529716","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:24:11.344Z"}