{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529717","patent":{"patent_number":"US-10529717","title":"Orientation engineering in complementary metal oxide semiconductor fin field effect transistor integration for increased mobility and sharper junction","assignee":null,"inventors":[],"filing_date":"2015-09-25T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":14,"abstract":"A semiconductor device that includes at least one germanium containing fin structure having a length along a <100> direction and a sidewall orientated along the (100) plane. The semiconductor device also includes at least one germanium free fin structure having a length along a <100> direction and a sidewall orientated along the (100) plane. A gate structure is present on a channel region of each of the germanium containing fin structure and the germanium free fin structure. N-type epitaxial semiconductor material having a square geometry present on the source and drain portions of the sidewalls having the (100) plane orientation of the germanium free fin structures. P-type epitaxial semiconductor material having a square geometry is present on the source and drain portions of the sidewalls having the (100) plane orientation of the germanium containing fin structures."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Orientation engineering in complementary metal oxide semiconductor fin field effect transistor integration for increased mobility and sharper junction","description":"A semiconductor device that includes at least one germanium containing fin structure having a length along a <100> direction and a sidewall orientated along the (100) plane. The semiconductor device a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529717","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529717","citation_suggestion":"Patentable. \"Orientation engineering in complementary metal oxide semiconductor fin field effect transistor integration for increased mobility and sharper junction\" (US-10529717). https://patentable.app/patents/US-10529717","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529717","json":"https://patentable.app/api/llm-context/US-10529717","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T23:16:47.505Z"}