{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529719","patent":{"patent_number":"US-10529719","title":"Semiconductor structure and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2018-04-24T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"A semiconductor structure includes an active area in a substrate, a device isolation region surrounding the active area, first and second bit line structures on the substrate, a conductive diffusion region in the active area between the first and the second bit line structures, and a contact hole between the first and the second bit line structures. The contact hole partially exposes the conductive diffusion region. A buried plug layer is disposed in the contact hole and in direct contact with the conductive diffusion region. A storage node contact layer is disposed on the buried plug layer within the contact hole. The storage node contact layer has a downwardly protruding portion surrounded by the buried plug layer. The buried plug layer has a U-shaped cross-sectional profile."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and fabrication method thereof","description":"A semiconductor structure includes an active area in a substrate, a device isolation region surrounding the active area, first and second bit line structures on the substrate, a conductive diffusion r","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529719","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529719","citation_suggestion":"Patentable. \"Semiconductor structure and fabrication method thereof\" (US-10529719). https://patentable.app/patents/US-10529719","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529719","json":"https://patentable.app/api/llm-context/US-10529719","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:55:38.155Z"}