{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529731","patent":{"patent_number":"US-10529731","title":"Semiconductor memory device in which different upper limit values are set for pass voltages","assignee":null,"inventors":[],"filing_date":"2018-03-01T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["G06F","G11C","G11C","G11C","G11C","G11C"],"num_claims":12,"abstract":"A semiconductor memory device includes a first memory cell transistor, a second memory cell transistor, and a third memory cell transistor that are connected in series. A word line is coupled to a gate of the third memory cell transistor. A controller is configured to set a first upper limit value for voltages applied to the word line during writing of data to the first memory cell transistor and a second upper limit value for voltages applied to the word line during writing of data to the second memory cell transistor. The second upper limit value is different from the first upper limit value."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device in which different upper limit values are set for pass voltages","description":"A semiconductor memory device includes a first memory cell transistor, a second memory cell transistor, and a third memory cell transistor that are connected in series. A word line is coupled to a gat","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529731","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529731","citation_suggestion":"Patentable. \"Semiconductor memory device in which different upper limit values are set for pass voltages\" (US-10529731). https://patentable.app/patents/US-10529731","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529731","json":"https://patentable.app/api/llm-context/US-10529731","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:00:16.154Z"}