{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529755","patent":{"patent_number":"US-10529755","title":"Image sensor having a photoelectric conversion layer coupled to a storage node through a pinning layer with P-type impurities","assignee":null,"inventors":[],"filing_date":"2017-09-14T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H04N","H04N","H04N","H04N","H04N"],"num_claims":6,"abstract":"An image sensor includes a first photoelectric conversion layer that is configured to convert light to a first signal. The image sensor also includes a transfer transistor. The transfer transistor includes a storage node region which stores the first signal. The transfer transistor also includes a transfer gate which transfers the stored first signal, and a floating diffusion region that receives the first signal. The image sensor includes a reset transistor that resets the floating diffusion region, and a drive transistor which receives a pixel voltage. The drive transistor generates an output voltage. The image sensor also includes a selection transistor which outputs the output voltage. A reset drain voltage is applied to a drain electrode of the reset transistor, and is independent of the pixel voltage. The reset drain voltage ranges from about 0.1V to about 1.0V."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Image sensor having a photoelectric conversion layer coupled to a storage node through a pinning layer with P-type impurities","description":"An image sensor includes a first photoelectric conversion layer that is configured to convert light to a first signal. The image sensor also includes a transfer transistor. The transfer transistor inc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529755","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529755","citation_suggestion":"Patentable. \"Image sensor having a photoelectric conversion layer coupled to a storage node through a pinning layer with P-type impurities\" (US-10529755). https://patentable.app/patents/US-10529755","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529755","json":"https://patentable.app/api/llm-context/US-10529755","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:18:35.840Z"}