{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529803","patent":{"patent_number":"US-10529803","title":"Semiconductor device with epitaxial source/drain","assignee":null,"inventors":[],"filing_date":"2017-11-15T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A semiconductor device and method of manufacturing the semiconductor device are provided. In some embodiments, the semiconductor device includes a fin extending from a substrate and a gate structure disposed over the fin. The gate structure includes a gate dielectric formed over the fin, a gate electrode formed over the gate dielectric, and a sidewall spacer formed along a sidewall of the gate electrode. In some cases, a U-shaped recess is within the fin and adjacent to the gate structure. A first source/drain layer is conformally formed on a surface of the U-shaped recess, where the first source/drain layer extends at least partially under the adjacent gate structure. A second source/drain layer is formed over the first source/drain layer. At least one of the first and second source/drain layers includes silicon arsenide (SiAs)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with epitaxial source/drain","description":"A semiconductor device and method of manufacturing the semiconductor device are provided. In some embodiments, the semiconductor device includes a fin extending from a substrate and a gate structure d","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529803","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529803","citation_suggestion":"Patentable. \"Semiconductor device with epitaxial source/drain\" (US-10529803). https://patentable.app/patents/US-10529803","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529803","json":"https://patentable.app/api/llm-context/US-10529803","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:38:17.126Z"}