{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529809","patent":{"patent_number":"US-10529809","title":"Method of manufacturing a power semiconductor device","assignee":null,"inventors":[],"filing_date":"2018-12-28T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":15,"abstract":"A method of manufacturing a power semiconductor device includes: creating a doped contact region on top of a surface of a carrier; creating, on top of the contact region, a doped transition region having a maximum dopant concentration of at least 0.5*1015 cm−3 for at least 70% of a total extension of the doped transition region in an extension direction and a maximal dopant concentration gradient of at most 3*1022 cm−4, wherein a lower subregion of the doped transition region is in contact with the contact region and has a maximum dopant concentration at least 100 times higher than a maximum dopant concentration of an upper subregion of the doped transition region; and creating a doped drift region on top of the upper subregion of the doped transition region, the doped drift region having a lower dopant concentration than the upper subregion of the doped transition region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing a power semiconductor device","description":"A method of manufacturing a power semiconductor device includes: creating a doped contact region on top of a surface of a carrier; creating, on top of the contact region, a doped transition region hav","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529809","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529809","citation_suggestion":"Patentable. \"Method of manufacturing a power semiconductor device\" (US-10529809). https://patentable.app/patents/US-10529809","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529809","json":"https://patentable.app/api/llm-context/US-10529809","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:59:49.045Z"}