{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529823","patent":{"patent_number":"US-10529823","title":"Method of manufacturing a semiconductor device having a metal gate with different lateral widths between spacers","assignee":null,"inventors":[],"filing_date":"2018-05-29T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A method for manufacturing a semiconductor device includes forming a channel layer on a semiconductor substrate and forming at least two spacers on the channel layer. A first portion of a gate metal layer is formed between the spacers, and a dielectric layer is conformally deposited on the spacers and the first portion of the gate metal layer. In the method, part of the dielectric layer is directionally removed from surfaces which are parallel to an upper surface of the substrate. A second portion of the gate metal layer is formed between remaining portions of the dielectric layer and on the first portion of the gate metal layer, and a cap layer is deposited on the second portion of the gate metal layer. A lateral width the second portion of the gate metal layer is less than a lateral width of the first portion of the gate metal layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing a semiconductor device having a metal gate with different lateral widths between spacers","description":"A method for manufacturing a semiconductor device includes forming a channel layer on a semiconductor substrate and forming at least two spacers on the channel layer. A first portion of a gate metal l","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529823","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529823","citation_suggestion":"Patentable. \"Method of manufacturing a semiconductor device having a metal gate with different lateral widths between spacers\" (US-10529823). https://patentable.app/patents/US-10529823","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529823","json":"https://patentable.app/api/llm-context/US-10529823","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:30:59.139Z"}