{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529826","patent":{"patent_number":"US-10529826","title":"Forming self-aligned gate and source/drain contacts using sacrificial gate cap spacer and resulting devices","assignee":null,"inventors":[],"filing_date":"2018-08-13T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method includes forming an active layer, forming a gate structure above a channel region of the active layer, forming a sidewall spacer adjacent the gate structure, forming a first dielectric layer adjacent the sidewall spacer, recessing the gate structure to define a gate cavity, forming an inner spacer in the gate cavity, forming a cap layer in the gate cavity, recessing the first dielectric layer and the sidewall spacer to expose sidewall surfaces of the cap layer, removing the inner spacer to define a first spacer cavity, forming an upper spacer in the spacer cavity and contacting sidewall surfaces of the cap layer, forming a second dielectric layer above the upper spacer and the cap layer, and forming a first contact structure at least partially embedded in the second dielectric layer and contacting a surface of the upper spacer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Forming self-aligned gate and source/drain contacts using sacrificial gate cap spacer and resulting devices","description":"A method includes forming an active layer, forming a gate structure above a channel region of the active layer, forming a sidewall spacer adjacent the gate structure, forming a first dielectric layer ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529826","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529826","citation_suggestion":"Patentable. \"Forming self-aligned gate and source/drain contacts using sacrificial gate cap spacer and resulting devices\" (US-10529826). https://patentable.app/patents/US-10529826","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529826","json":"https://patentable.app/api/llm-context/US-10529826","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:48:49.759Z"}