{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529832","patent":{"patent_number":"US-10529832","title":"Shallow, abrupt and highly activated tin extension implant junction","assignee":null,"inventors":[],"filing_date":"2016-12-19T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":13,"abstract":"Embodiments are directed to a method of forming a semiconductor device and resulting structures having a shallow, abrupt and highly activated tin (Sn) extension implant junction. The method includes forming a semiconductor fin on a substrate. A gate is formed over a channel region of the semiconductor fin. A Sn extension implant junction is formed on a surface of the semiconductor fin in the channel region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Shallow, abrupt and highly activated tin extension implant junction","description":"Embodiments are directed to a method of forming a semiconductor device and resulting structures having a shallow, abrupt and highly activated tin (Sn) extension implant junction. The method includes f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529832","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529832","citation_suggestion":"Patentable. \"Shallow, abrupt and highly activated tin extension implant junction\" (US-10529832). https://patentable.app/patents/US-10529832","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529832","json":"https://patentable.app/api/llm-context/US-10529832","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:23:56.438Z"}