{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529842","patent":{"patent_number":"US-10529842","title":"Semiconductor base substance having a boron containing buffer layer, semiconductor device including the same, and methods for manufacturing the semiconductor base substance and the semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-08-29T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":8,"abstract":"A semiconductor base substance includes: a substrate; a buffer layer which is made of a nitride semiconductor and provided on the substrate; and a channel layer which is made of a nitride semiconductor and provided on the buffer layer, wherein the buffer layer includes: a first region which is provided on the substrate side and has boron concentration higher than acceptor element concentration; and a second region which is provided on the first region, and has boron concentration lower than that in the first region and acceptor element concentration higher than that in the first region. As a result, the semiconductor base substance which can obtain a high pit suppression effect while maintaining a high longitudinal breakdown voltage is provided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor base substance having a boron containing buffer layer, semiconductor device including the same, and methods for manufacturing the semiconductor base substance and the semiconductor device","description":"A semiconductor base substance includes: a substrate; a buffer layer which is made of a nitride semiconductor and provided on the substrate; and a channel layer which is made of a nitride semiconducto","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529842","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529842","citation_suggestion":"Patentable. \"Semiconductor base substance having a boron containing buffer layer, semiconductor device including the same, and methods for manufacturing the semiconductor base substance and the semiconductor device\" (US-10529842). https://patentable.app/patents/US-10529842","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529842","json":"https://patentable.app/api/llm-context/US-10529842","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:24:21.735Z"}