{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529847","patent":{"patent_number":"US-10529847","title":"Trench power semiconductor component and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2018-08-24T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":18,"abstract":"The present disclosure provides a trench power semiconductor component and a method of manufacturing the same. The trench gate structure of the trench power semiconductor component includes a shielding electrode, a gate electrode disposed above the shielding electrode, and an inter-electrode dielectric layer. Before the formation of the inter-electrode dielectric layer, the step of forming the trench gate structure includes: forming a laminated structure covering the inner wall surface of the cell trench, in which the laminated structure includes a semiconductor material layer and an initial inner dielectric layer covering the semiconductor material layer; forming a heavily-doped semiconductor material in the lower part of the cell trench; and removing a portion of the initial inner dielectric layer located at an upper part of the cell trench to expose an upper half portion of the semiconductor material layer and a top portion of the heavily doped semiconductor material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Trench power semiconductor component and method of manufacturing the same","description":"The present disclosure provides a trench power semiconductor component and a method of manufacturing the same. The trench gate structure of the trench power semiconductor component includes a shieldin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529847","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529847","citation_suggestion":"Patentable. \"Trench power semiconductor component and method of manufacturing the same\" (US-10529847). https://patentable.app/patents/US-10529847","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529847","json":"https://patentable.app/api/llm-context/US-10529847","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:18:48.091Z"}