{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529851","patent":{"patent_number":"US-10529851","title":"Forming bottom source and drain extension on vertical transport FET (VTFET)","assignee":null,"inventors":[],"filing_date":"2018-07-12T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"Techniques for forming bottom source and drain extensions in VTFET devices are provided. In one aspect, a method of forming a VTFET device includes: patterning fins in a wafer; forming a liner at a base of the fins having a higher diffusivity for dopants than the fins; forming sidewall spacers alongside an upper portion of the fins; forming bottom source/drains on the liner at the base of the fins including the dopants; annealing the wafer to diffuse the dopants from the bottom source/drains, through the liner, into the base of the fins to form bottom extensions; removing the sidewall spacers; forming bottom spacers on the bottom source/drains; forming gate stacks alongside the fins above the bottom spacers; forming top spacers above the gate stacks; and forming top source/drains above the top spacers at tops of the fins. A VTFET device is also provided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Forming bottom source and drain extension on vertical transport FET (VTFET)","description":"Techniques for forming bottom source and drain extensions in VTFET devices are provided. In one aspect, a method of forming a VTFET device includes: patterning fins in a wafer; forming a liner at a ba","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529851","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529851","citation_suggestion":"Patentable. \"Forming bottom source and drain extension on vertical transport FET (VTFET)\" (US-10529851). https://patentable.app/patents/US-10529851","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529851","json":"https://patentable.app/api/llm-context/US-10529851","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T07:06:40.960Z"}