{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529855","patent":{"patent_number":"US-10529855","title":"Charge carrier transport facilitated by strain","assignee":null,"inventors":[],"filing_date":"2018-04-27T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"A semiconductor structure and formation thereof. The semiconductor structure has a first semiconductor layer with a first lattice structure and a second epitaxial semiconductor layer that is lattice-matched with the first semiconductor layer. At least two source/drain regions, which have a second lattice structure, penetrate the second semiconductor layer and contact the first semiconductor layer. A portion of the second semiconductor layer is between the source/drain regions and has a degree of uniaxial strain that is based, at least in part, on a difference between the first lattice structure and the second lattice structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Charge carrier transport facilitated by strain","description":"A semiconductor structure and formation thereof. The semiconductor structure has a first semiconductor layer with a first lattice structure and a second epitaxial semiconductor layer that is lattice-m","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529855","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529855","citation_suggestion":"Patentable. \"Charge carrier transport facilitated by strain\" (US-10529855). https://patentable.app/patents/US-10529855","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529855","json":"https://patentable.app/api/llm-context/US-10529855","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:23:36.394Z"}