{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529859","patent":{"patent_number":"US-10529859","title":"Multi-channel transistor including an asymmetrical source/drain contact","assignee":null,"inventors":[],"filing_date":"2018-05-24T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a lower interlayer insulating film including a first trench and a second trench adjacent each other; a first gate structure within the first trench and extending in a first direction; a second gate structure within the second trench and extending in the first direction; a source/drain adjacent the first gate structure and the second gate structure; an upper interlayer insulating film on the lower interlayer insulating film; and a contact connected to the source/drain, the contact in the upper interlayer insulating film and the lower interlayer insulating film, wherein the contact includes a first side wall and a second side wall, the first side wall of the contact and the second side wall of the contact are asymmetric with each other, and the contact does not vertically overlap the first gate structure and the second gate structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multi-channel transistor including an asymmetrical source/drain contact","description":"A semiconductor device includes a lower interlayer insulating film including a first trench and a second trench adjacent each other; a first gate structure within the first trench and extending in a f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529859","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529859","citation_suggestion":"Patentable. \"Multi-channel transistor including an asymmetrical source/drain contact\" (US-10529859). https://patentable.app/patents/US-10529859","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529859","json":"https://patentable.app/api/llm-context/US-10529859","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:31:01.971Z"}