{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529867","patent":{"patent_number":"US-10529867","title":"Schottky diode having double p-type epitaxial layers with high breakdown voltage and surge current capability","assignee":null,"inventors":[],"filing_date":"2018-11-01T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":14,"abstract":"In one aspect, a method for manufacturing a Schottky diode with double P-type epitaxial layers may include steps of: providing a substrate; forming a first epitaxial layer on top of the substrate; forming a second epitaxial layer on top of the first epitaxial layer; depositing a third epitaxial layer on top of the second epitaxial layer; patterning the second and third epitaxial layers to form a plurality of trenches in the second and third epitaxial layers; depositing a first ohmic contact metal on a backside of the substrate; forming a second ohmic contact metal on top of the patterned third epitaxial layer; forming a Schottky contact metal at a bottom portion of each trench; and forming a pad electrode on top of the Schottky contact metal. In one embodiment, the second and third epitaxial layers can be made by P− type SiC and P+ type SiC, respectively."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Schottky diode having double p-type epitaxial layers with high breakdown voltage and surge current capability","description":"In one aspect, a method for manufacturing a Schottky diode with double P-type epitaxial layers may include steps of: providing a substrate; forming a first epitaxial layer on top of the substrate; for","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529867","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529867","citation_suggestion":"Patentable. \"Schottky diode having double p-type epitaxial layers with high breakdown voltage and surge current capability\" (US-10529867). https://patentable.app/patents/US-10529867","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529867","json":"https://patentable.app/api/llm-context/US-10529867","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:18:41.250Z"}