{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10529919","patent":{"patent_number":"US-10529919","title":"Method of manufacturing a magnetoresistive random access memory device using hard masks and spacers","assignee":null,"inventors":[],"filing_date":"2018-07-25T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":20,"abstract":"A method of manufacturing an MRAM device including forming a first insulating interlayer and a lower electrode contact, the lower electrode contact extending through the first insulating interlayer; forming a lower electrode layer, a magnetic tunnel junction layer, an upper electrode layer, and a first hard mask layer on the first insulating interlayer and lower electrode contact; forming a second hard mask on the first hard mask layer; etching the first hard mask layer and upper electrode layer to form a first hard mask and upper electrode; forming a spacer on sidewalls of the upper electrode and hard masks; and etching the magnetic tunnel junction layer and the lower electrode layer to form a structure including a lower electrode and a magnetic tunnel junction pattern on the lower electrode contact, wherein a layer remains on the upper electrode after etching the magnetic tunnel junction layer and the lower electrode layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing a magnetoresistive random access memory device using hard masks and spacers","description":"A method of manufacturing an MRAM device including forming a first insulating interlayer and a lower electrode contact, the lower electrode contact extending through the first insulating interlayer; f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10529919","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10529919","citation_suggestion":"Patentable. \"Method of manufacturing a magnetoresistive random access memory device using hard masks and spacers\" (US-10529919). https://patentable.app/patents/US-10529919","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10529919","json":"https://patentable.app/api/llm-context/US-10529919","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T15:08:14.498Z"}