{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10530354","patent":{"patent_number":"US-10530354","title":"Insulated gate semiconductor device and method for manufacturing insulated gate semiconductor device","assignee":null,"inventors":[],"filing_date":"2018-02-26T00:00:00.000Z","publication_date":"2020-01-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H02M","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"An insulating gate semiconductor device includes an insulating gate semiconductor element, an insulating circuit board, and a main-current path member. A main-current of the insulating gate semiconductor element flows toward a first external terminal in the main-current path member; and a gate-current path member, being patterned so as to have a linearly extending portion arranged in parallel to a linearly extending portion of the main-current path member in a planar pattern on the insulating circuit board, being provided to connect between a second external terminal and a gate electrode of the insulating gate semiconductor element. A current which is induced in the gate-current path member by mutual induction caused by a change in magnetic field implemented by the main-current is used for increasing the gate-current in a turn-on period of the insulating gate semiconductor element."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Insulated gate semiconductor device and method for manufacturing insulated gate semiconductor device","description":"An insulating gate semiconductor device includes an insulating gate semiconductor element, an insulating circuit board, and a main-current path member. A main-current of the insulating gate semiconduc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10530354","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10530354","citation_suggestion":"Patentable. \"Insulated gate semiconductor device and method for manufacturing insulated gate semiconductor device\" (US-10530354). https://patentable.app/patents/US-10530354","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10530354","json":"https://patentable.app/api/llm-context/US-10530354","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:58:45.010Z"}