{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10533250","patent":{"patent_number":"US-10533250","title":"Method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2018-03-21T00:00:00.000Z","publication_date":"2020-01-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"Described herein is a technique capable of improving a quality of a film formed on a substrate. According to the technique described herein, there is provided a method of manufacturing a semiconductor device, including: (a) exhausting an inner atmosphere of a first gas supply pipe configured to supply a first gas generated by a vaporizer to a process chamber accommodating a substrate by a first gas discharge system connected to the first gas supply pipe; (b) exhausting an inner atmosphere of the vaporizer through a second gas discharge system provided at a vaporizer outlet pipe of the vaporizer by supplying an inert gas to the vaporizer via a vaporizer inlet pipe of the vaporizer; and (c) supplying the first gas generated by the vaporizer to the process chamber accommodating the substrate via the vaporizer outlet pipe, the first gas supply pipe and a first timing valve provided at the first gas supply pipe before (a) is performed or after (b) is performed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device","description":"Described herein is a technique capable of improving a quality of a film formed on a substrate. According to the technique described herein, there is provided a method of manufacturing a semiconductor","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10533250","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10533250","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device\" (US-10533250). https://patentable.app/patents/US-10533250","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10533250","json":"https://patentable.app/api/llm-context/US-10533250","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T07:05:54.225Z"}