{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10535409","patent":{"patent_number":"US-10535409","title":"Method for suppressing gate oxide tunnel current in non-volatile memory to reduce disturbs","assignee":null,"inventors":[],"filing_date":"2016-12-29T00:00:00.000Z","publication_date":"2020-01-14T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":25,"abstract":"A disturb management technique for a non-volatile memory including first and second memory cells includes programming the first memory cell by applying a first voltage to a first word line coupled to the first memory cell and a second voltage to a terminal, such as a source terminal, shared by the first memory cell and the second memory cell. A non-zero third voltage having the same sign as the second voltage is applied to a second word line coupled to the second memory cell. The applied non-zero third voltage reduces a tunnel current across a gate oxide that insulates the second word line from a substrate of the second memory cell. This results in the second memory cell having a lower likelihood of being disturbed when programming the first memory cell."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for suppressing gate oxide tunnel current in non-volatile memory to reduce disturbs","description":"A disturb management technique for a non-volatile memory including first and second memory cells includes programming the first memory cell by applying a first voltage to a first word line coupled to ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10535409","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10535409","citation_suggestion":"Patentable. \"Method for suppressing gate oxide tunnel current in non-volatile memory to reduce disturbs\" (US-10535409). https://patentable.app/patents/US-10535409","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10535409","json":"https://patentable.app/api/llm-context/US-10535409","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:05:15.863Z"}