{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10535512","patent":{"patent_number":"US-10535512","title":"Formation method of semiconductor device with gate spacer","assignee":null,"inventors":[],"filing_date":"2018-10-11T00:00:00.000Z","publication_date":"2020-01-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A structure and a formation method of a semiconductor device structure are provided. The method includes forming a gate stack over a semiconductor substrate. The method also includes forming a sealing layer over a sidewall of the gate stack using an atomic layer deposition process. The atomic layer deposition process includes alternately and sequentially introducing a first silicon-containing precursor gas and a second silicon-containing precursor gas over the sidewall of the gate stack to form the sealing layer. The second silicon-containing precursor gas has a different atomic concentration of carbon than that of the first silicon-containing precursor gas. The method further includes partially removing the sealing layer to form a sealing element over the sidewall of the gate stack."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Formation method of semiconductor device with gate spacer","description":"A structure and a formation method of a semiconductor device structure are provided. The method includes forming a gate stack over a semiconductor substrate. The method also includes forming a sealing","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10535512","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10535512","citation_suggestion":"Patentable. \"Formation method of semiconductor device with gate spacer\" (US-10535512). https://patentable.app/patents/US-10535512","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10535512","json":"https://patentable.app/api/llm-context/US-10535512","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:23:46.170Z"}