{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10535529","patent":{"patent_number":"US-10535529","title":"Semiconductor fin length variability control","assignee":null,"inventors":[],"filing_date":"2018-06-05T00:00:00.000Z","publication_date":"2020-01-14T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":17,"abstract":"Techniques for fin length variability control are provided. In one aspect, a method of patterning fins in a wafer includes: depositing a hardmask and a tone invert layer on the wafer; patterning trenches in the tone invert layer; forming inverse tone etch masks on the hardmask within the trenches, wherein the inverse tone etch masks include inner and outer inverse tone etch masks; forming a save mask with opposite ends thereof aligned with the outer inverse tone etch masks; using the save mask to selectively remove unmasked portions of the tone invert layer; removing the outer inverse tone etch masks, wherein the inner inverse tone etch masks that remain have a uniform length L; patterning the hardmask into individual fin hardmasks using the inner inverse tone etch masks; and patterning fins in the wafer using the fin hardmasks. A device having fins of a uniform length L is also provided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor fin length variability control","description":"Techniques for fin length variability control are provided. In one aspect, a method of patterning fins in a wafer includes: depositing a hardmask and a tone invert layer on the wafer; patterning trenc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10535529","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10535529","citation_suggestion":"Patentable. \"Semiconductor fin length variability control\" (US-10535529). https://patentable.app/patents/US-10535529","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10535529","json":"https://patentable.app/api/llm-context/US-10535529","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:52:33.989Z"}