{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10535530","patent":{"patent_number":"US-10535530","title":"Patterning method","assignee":null,"inventors":[],"filing_date":"2018-10-22T00:00:00.000Z","publication_date":"2020-01-14T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":18,"abstract":"A patterning method for forming a semiconductor device is disclosed. A substrate having a hard mask disposed thereon is provided. A first patterned layer is formed on the hard mask layer. A first self-aligned double patterning process based on the first patterned layer is performed to pattern the hard mask layer into a first array pattern and a first peripheral pattern. After that, a second patterned layer is formed on the substrate. A second self-aligned double patterning process based on the second patterned layer is performed to pattern the first array pattern into a second array pattern. Subsequently, a third patterned layer is formed on the substrate. An etching process using the third patterned mask layer as an etching mask is performed to etch the first peripheral pattern thereby patterning the first peripheral pattern into a second peripheral pattern."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Patterning method","description":"A patterning method for forming a semiconductor device is disclosed. A substrate having a hard mask disposed thereon is provided. A first patterned layer is formed on the hard mask layer. A first self","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10535530","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10535530","citation_suggestion":"Patentable. \"Patterning method\" (US-10535530). https://patentable.app/patents/US-10535530","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10535530","json":"https://patentable.app/api/llm-context/US-10535530","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:11:38.608Z"}