{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10535555","patent":{"patent_number":"US-10535555","title":"Contact plugs and methods forming same","assignee":null,"inventors":[],"filing_date":"2018-11-30T00:00:00.000Z","publication_date":"2020-01-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method includes forming a transistor including forming a source/drain region on a side of a dummy gate stack, forming a first Inter-Layer Dielectric (ILD) covering the source/drain region, and replacing the dummy gate stack with a replacement gate stack. The method further includes forming a second ILD over the first ILD and the replacement gate stack, and forming a lower source/drain contact plug electrically coupling to the source/drain region. The lower source/drain contact plug penetrates through both the first ILD and the second ILD. A third ILD is formed over the second ILD. A gate contact plug is formed in the second ILD and the third ILD. An upper source/drain contact plug is formed overlapping and contacting the lower source/drain contact plug. The upper source/drain contact plug penetrates through the third ILD. The upper source/drain contact plug and the gate contact plug are formed of different materials."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Contact plugs and methods forming same","description":"A method includes forming a transistor including forming a source/drain region on a side of a dummy gate stack, forming a first Inter-Layer Dielectric (ILD) covering the source/drain region, and repla","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10535555","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10535555","citation_suggestion":"Patentable. \"Contact plugs and methods forming same\" (US-10535555). https://patentable.app/patents/US-10535555","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10535555","json":"https://patentable.app/api/llm-context/US-10535555","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:35:40.766Z"}