{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10535560","patent":{"patent_number":"US-10535560","title":"Interconnection structure of semiconductor device","assignee":null,"inventors":[],"filing_date":"2017-07-18T00:00:00.000Z","publication_date":"2020-01-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a first conductive feature in a first dielectric layer and a second conductive feature over the first dielectric layer. The semiconductor device structure also includes a conductive via between the first conductive feature and the second conductive feature. The conductive via includes an etching stop layer over the first conductive feature, a conductive pillar over the etching stop layer, and a capping layer surrounding the conductive pillar and the etching stop layer. The first conductive feature and the second conductive feature are electrically connected to each other through the capping layer, the conductive pillar, and the etching stop layer. The semiconductor device structure further includes a second dielectric layer over the first dielectric layer and below the second conductive feature. The second dielectric layer surrounds the conductive via."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Interconnection structure of semiconductor device","description":"Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a first conductive feature in a first dielectric layer and a second condu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10535560","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10535560","citation_suggestion":"Patentable. \"Interconnection structure of semiconductor device\" (US-10535560). https://patentable.app/patents/US-10535560","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10535560","json":"https://patentable.app/api/llm-context/US-10535560","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T07:33:40.035Z"}