{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10535567","patent":{"patent_number":"US-10535567","title":"Methods and structures for forming uniform fins when using hardmask patterns","assignee":null,"inventors":[],"filing_date":"2019-04-23T00:00:00.000Z","publication_date":"2020-01-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for manufacturing a semiconductor device includes forming a hardmask layer on a substrate, patterning the hardmask layer to form a plurality of patterned hardmask portions on the substrate, depositing a dummy hardmask layer on the substrate, patterning the dummy hardmask layer to form a plurality of patterned dummy hardmask portions on the substrate, wherein each of the plurality of patterned dummy hardmask portions is positioned adjacent respective outermost patterned hardmask portions of the plurality of patterned hardmask portions, and transferring a pattern of the plurality of patterned hardmask portions and the plurality of patterned dummy hardmask portions to the substrate to form a plurality of fins and a plurality of dummy fins from the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods and structures for forming uniform fins when using hardmask patterns","description":"A method for manufacturing a semiconductor device includes forming a hardmask layer on a substrate, patterning the hardmask layer to form a plurality of patterned hardmask portions on the substrate, d","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10535567","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10535567","citation_suggestion":"Patentable. \"Methods and structures for forming uniform fins when using hardmask patterns\" (US-10535567). https://patentable.app/patents/US-10535567","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10535567","json":"https://patentable.app/api/llm-context/US-10535567","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:29:21.168Z"}