{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10535570","patent":{"patent_number":"US-10535570","title":"Cointegration of III-V channels and germanium channels for vertical field effect transistors","assignee":null,"inventors":[],"filing_date":"2018-06-22T00:00:00.000Z","publication_date":"2020-01-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"Methods for forming cointegrated III-V and Ge channels for vertical field effect transistors are described. Aspects of the invention include forming a first fin and a second fin on a substrate, wherein the first fin includes a first material including a first semiconductor material at a first concentration level, and wherein the second fin includes a second material including a second semiconductor material at a second concentration. A condensation oxidation is performed to increase the first concentration level to a targeted first final concentration level and increase the second concentration level to a targeted second final concentration level. The second fin is replaced with a third fin including a third material including a combination of a group III element with a group V element."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Cointegration of III-V channels and germanium channels for vertical field effect transistors","description":"Methods for forming cointegrated III-V and Ge channels for vertical field effect transistors are described. Aspects of the invention include forming a first fin and a second fin on a substrate, wherei","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10535570","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10535570","citation_suggestion":"Patentable. \"Cointegration of III-V channels and germanium channels for vertical field effect transistors\" (US-10535570). https://patentable.app/patents/US-10535570","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10535570","json":"https://patentable.app/api/llm-context/US-10535570","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T15:12:01.384Z"}